MJ15001G Bipolar Transistor

Characteristics of MJ15001G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 150
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ15001G is the lead-free version of the MJ15001 transistor

Pinout of MJ15001G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ15001G is the MJ15002G.

Replacement and Equivalent for MJ15001G transistor

You can replace the MJ15001G with the MJ15001, MJ15003 or MJ15003G.
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