BDV66 Bipolar Transistor

Characteristics of BDV66 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3P

Pinout of BDV66

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDV66 is the BDV67.

Replacement and Equivalent for BDV66 transistor

You can replace the BDV66 with the BDV66A, BDV66B or BDV66C.
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