BDV66A Bipolar Transistor

Characteristics of BDV66A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3P

Pinout of BDV66A

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDV66A is the BDV67A.

Replacement and Equivalent for BDV66A transistor

You can replace the BDV66A with the BDV66B, BDV66C or BDV66D.
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