BDV67 Bipolar Transistor
Characteristics of BDV67 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 16 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3P
Pinout of BDV67
Complementary PNP transistor
Replacement and Equivalent for BDV67 transistor
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