BDT32 Bipolar Transistor

Characteristics of BDT32 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT32

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT32 is the BDT31.

Replacement and Equivalent for BDT32 transistor

You can replace the BDT32 with the BDT32A, BDT32B, D44C10, D44C4, D44C7, D45C10, D45C4, D45C7, TIP32, TIP32A, TIP32AG, TIP32B, TIP32BG or TIP32G.
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