BDT31 Bipolar Transistor
Characteristics of BDT31 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 10 to 50
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT31
Complementary PNP transistor
Replacement and Equivalent for BDT31 transistor
If you find an error please send an email to mail@el-component.com