BDT31 Bipolar Transistor

Characteristics of BDT31 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 40 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 10 to 50
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT31

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT31 is the BDT32.

Replacement and Equivalent for BDT31 transistor

You can replace the BDT31 with the BDT31A, BDT31B, TIP31, TIP31A, TIP31AG, TIP31B, TIP31BG or TIP31G.
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