BDT29CF Bipolar Transistor

Characteristics of BDT29CF Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 19 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular BDT29C transistor

Pinout of BDT29CF

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT29CF is the BDT30CF.

Replacement and Equivalent for BDT29CF transistor

You can replace the BDT29CF with the 2N6473, 2N6474, 2SD772, 2SD772A, 2SD792, 2SD792A, BD711, BD911, BDT41C, BDT41CF, MJE5180, MJE5181, MJE5182, NTE291, TIP29C, TIP29CG, TIP41C, TIP41CF, TIP41CG, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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