BDT29CF Bipolar Transistor
Characteristics of BDT29CF Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 140 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 19 W
- DC Current Gain (hfe): 15 to 75
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
- Electrically Similar to the Popular BDT29C transistor
Pinout of BDT29CF
Complementary PNP transistor
Replacement and Equivalent for BDT29CF transistor
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