NTE291 Bipolar Transistor

Characteristics of NTE291 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 130 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 16 W
  • DC Current Gain (hfe): 15 to 150
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of NTE291

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE291 is the NTE292.

Replacement and Equivalent for NTE291 transistor

You can replace the NTE291 with the 2SD772, 2SD772A, 2SD772B, 2SD792, 2SD792A, 2SD792B, TIP41E, TIP41F, TIP42E or TIP42F.
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