MJE5181 Bipolar Transistor

Characteristics of MJE5181 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 15 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5181

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE5181 is the MJE5171.

Replacement and Equivalent for MJE5181 transistor

You can replace the MJE5181 with the MJE5182, TIP41E, TIP41F, TIP42E or TIP42F.
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