BD877 Bipolar Transistor

Characteristics of BD877 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 9 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD877

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD877 is the BD878.

Replacement and Equivalent for BD877 transistor

You can replace the BD877 with the 2SD1509, 2SD1692, 2SD1692-K, 2SD1692-L, 2SD1692-M, 2SD985, 2SD985-K, 2SD985-L, 2SD985-M, 2SD986, 2SD986-K, 2SD986-L, 2SD986-M, BD879, KSB985, KSB985-O, KSB985-R, KSB985-Y, KSB986, KSB986-O, KSB986-R, KSB986-Y, KSD1692, KSD1692-G, KSD1692-O or KSD1692-Y.
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