KSD1692-G Bipolar Transistor

Characteristics of KSD1692-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 8000 to 20000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1692-K transistor

Pinout of KSD1692-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD1692-G transistor can have a current gain of 8000 to 20000. The gain of the KSD1692 will be in the range from 2000 to 20000, for the KSD1692-O it will be in the range from 2000 to 5000, for the KSD1692-Y it will be in the range from 4000 to 10000.

Replacement and Equivalent for KSD1692-G transistor

You can replace the KSD1692-G with the 2SD1692, 2SD1692-K, BD681, BD681G or MJE244.
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