KSB986-R Bipolar Transistor

Characteristics of KSB986-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 2000 to 5000
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD986-M transistor

Pinout of KSB986-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB986-R transistor can have a current gain of 2000 to 5000. The gain of the KSB986 will be in the range from 2000 to 30000, for the KSB986-O it will be in the range from 4000 to 10000, for the KSB986-Y it will be in the range from 8000 to 30000.

Complementary PNP transistor

The complementary PNP transistor to the KSB986-R is the KSB795-R.

Replacement and Equivalent for KSB986-R transistor

You can replace the KSB986-R with the 2N6039, 2N6039G, 2SD1509, 2SD1692, 2SD1692-M, 2SD986, 2SD986-M, BD169, BD237, BD237G, BD679, BD679A, BD679AG, BD679G, BD681, BD681G, BD779, KSD1692, KSD1692-O, KSE802, KSE803, MJE242, MJE244, MJE270, MJE270G, MJE722, MJE802, MJE802G, MJE803 or MJE803G.
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