BD879 Bipolar Transistor
Characteristics of BD879 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 9 W
- DC Current Gain (hfe): 2000
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of BD879
Complementary PNP transistor
Replacement and Equivalent for BD879 transistor
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