BCW66H Bipolar Transistor

Characteristics of BCW66H Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 75 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 250 to 630
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW66H

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW66H transistor can have a current gain of 250 to 630. The gain of the BCW66 will be in the range from 100 to 630, for the BCW66F it will be in the range from 100 to 250, for the BCW66G it will be in the range from 160 to 400.

Complementary PNP transistor

The complementary PNP transistor to the BCW66H is the BCW68H.

Replacement and Equivalent for BCW66H transistor

You can replace the BCW66H with the FMMT619 or FMMT620.
If you find an error please send an email to mail@el-component.com