BCW66G Bipolar Transistor

Characteristics of BCW66G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 75 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 160 to 400
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW66G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW66G transistor can have a current gain of 160 to 400. The gain of the BCW66 will be in the range from 100 to 630, for the BCW66F it will be in the range from 100 to 250, for the BCW66H it will be in the range from 250 to 630.

Complementary PNP transistor

The complementary PNP transistor to the BCW66G is the BCW68G.

Replacement and Equivalent for BCW66G transistor

You can replace the BCW66G with the FMMT619 or FMMT620.
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