BCW66F Bipolar Transistor

Characteristics of BCW66F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 75 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 250
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW66F

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW66F transistor can have a current gain of 100 to 250. The gain of the BCW66 will be in the range from 100 to 630, for the BCW66G it will be in the range from 160 to 400, for the BCW66H it will be in the range from 250 to 630.

Complementary PNP transistor

The complementary PNP transistor to the BCW66F is the BCW68F.

Replacement and Equivalent for BCW66F transistor

You can replace the BCW66F with the FMMT491, FMMT491Q or FMMT619.
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