BC856AW Bipolar Transistor

Characteristics of BC856AW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 220
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC856AW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856AW transistor can have a current gain of 110 to 220. The gain of the BC856BW will be in the range from 200 to 450, for the BC856CW it will be in the range from 420 to 800, for the BC856W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856AW is the BC846AW.
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