2SD669A-C Bipolar Transistor

Characteristics of 2SD669A-C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD669A-C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD669A-C transistor can have a current gain of 100 to 200. The gain of the 2SD669A will be in the range from 60 to 200, for the 2SD669A-B it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD669A-C might only be marked "D669A-C".

Complementary PNP transistor

The complementary PNP transistor to the 2SD669A-C is the 2SB649A-C.

Replacement and Equivalent for 2SD669A-C transistor

You can replace the 2SD669A-C with the 2SC3117, 2SC3117-R, 2SC3902, 2SC3902-R or KTC2800.
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