2SC3117-R Bipolar Transistor

Characteristics of 2SC3117-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC3117-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC3117-R transistor can have a current gain of 100 to 200. The gain of the 2SC3117 will be in the range from 100 to 400, for the 2SC3117-S it will be in the range from 140 to 280, for the 2SC3117-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC3117-R might only be marked "C3117-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SC3117-R is the 2SA1249-R.

Replacement and Equivalent for 2SC3117-R transistor

You can replace the 2SC3117-R with the 2SC3902, 2SC3902-R, 2SD669A, 2SD669A-C or KTC2800.
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