2SD669-C Bipolar Transistor

Characteristics of 2SD669-C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD669-C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD669-C transistor can have a current gain of 100 to 200. The gain of the 2SD669 will be in the range from 60 to 320, for the 2SD669-B it will be in the range from 60 to 120, for the 2SD669-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD669-C might only be marked "D669-C".

Complementary PNP transistor

The complementary PNP transistor to the 2SD669-C is the 2SB649-C.

Replacement and Equivalent for 2SD669-C transistor

You can replace the 2SD669-C with the 2SC2481, 2SC2481-O, 2SC3117, 2SC3117-R, 2SC3621, 2SC3621-O, 2SC3902, 2SC3902-R, 2SD669A, 2SD669A-C or KTC2800.
If you find an error please send an email to mail@el-component.com