2SD1725-Q Bipolar Transistor

Characteristics of 2SD1725-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1725-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1725-Q transistor can have a current gain of 70 to 140. The gain of the 2SD1725 will be in the range from 70 to 400, for the 2SD1725-R it will be in the range from 100 to 200, for the 2SD1725-S it will be in the range from 140 to 280, for the 2SD1725-R it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1725-Q might only be marked "D1725-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1725-Q is the 2SB1168-Q.

SMD Version of 2SD1725-Q transistor

The BDP953 (SOT-223) and BDP955 (SOT-223) is the SMD version of the 2SD1725-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1725-Q transistor

You can replace the 2SD1725-Q with the BD791, MJE243, MJE243G or MJE244.
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