BDP955 Bipolar Transistor

Characteristics of BDP955 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 3 W
  • DC Current Gain (hfe): 40 to 475
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-223

Pinout of BDP955

Here is an image showing the pin diagram of this transistor.

Marking

The BDP955 transistor is marked as "BDP955".

Complementary PNP transistor

The complementary PNP transistor to the BDP955 is the BDP956.
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