2SD1254-P Bipolar Transistor
Characteristics of 2SD1254-P Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 130 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 130 to 260
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of 2SD1254-P
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD1254-P transistor
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