2SB931-P Bipolar Transistor
Characteristics of 2SB931-P Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -130 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 130 to 260
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of 2SB931-P
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB931-P transistor
If you find an error please send an email to mail@el-component.com