2SD1257-P Bipolar Transistor

Characteristics of 2SD1257-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1257-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1257-P transistor can have a current gain of 130 to 260. The gain of the 2SD1257 will be in the range from 60 to 260, for the 2SD1257-Q it will be in the range from 90 to 180, for the 2SD1257-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1257-P might only be marked "D1257-P".

Replacement and Equivalent for 2SD1257-P transistor

You can replace the 2SD1257-P with the 2SD1257A or 2SD1257A-P.
If you find an error please send an email to mail@el-component.com