2SD1250-P Bipolar Transistor

Characteristics of 2SD1250-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 240
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1250-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1250-P transistor can have a current gain of 100 to 240. The gain of the 2SD1250 will be in the range from 60 to 240, for the 2SD1250-Q it will be in the range from 60 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1250-P might only be marked "D1250-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SD1250-P is the 2SB928-P.

SMD Version of 2SD1250-P transistor

The PBHV9115T (SOT-23), PBHV9115X (SOT-89), PBHV9115Z (SOT-223) and PBHV9215Z (SOT-223) is the SMD version of the 2SD1250-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1250-P transistor

You can replace the 2SD1250-P with the 2SB928, 2SB928-P, 2SB928A, 2SB928A-P, 2SD1250A or 2SD1250A-P.
If you find an error please send an email to mail@el-component.com