2SD1250 Bipolar Transistor

Characteristics of 2SD1250 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 60 to 240
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1250

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1250 transistor can have a current gain of 60 to 240. The gain of the 2SD1250-P will be in the range from 100 to 240, for the 2SD1250-Q it will be in the range from 60 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1250 might only be marked "D1250".

Complementary NPN transistor

The complementary NPN transistor to the 2SD1250 is the 2SB928.

Replacement and Equivalent for 2SD1250 transistor

You can replace the 2SD1250 with the 2SB928, 2SB928A or 2SD1250A.
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