2SD1065-R Bipolar Transistor

Characteristics of 2SD1065-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1065-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1065-R transistor can have a current gain of 100 to 200. The gain of the 2SD1065 will be in the range from 70 to 280, for the 2SD1065-Q it will be in the range from 70 to 140, for the 2SD1065-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1065-R might only be marked "D1065-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1065-R is the 2SB829-R.

Replacement and Equivalent for 2SD1065-R transistor

You can replace the 2SD1065-R with the 2SC3256, 2SC3256-R, BD245A, BD245B, BD245C, BD249A, BD249B, BD249C or TIP35CA.
If you find an error please send an email to mail@el-component.com