2SC1009G Bipolar Transistor

Characteristics of 2SC1009G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SC1009G

The 2SC1009G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC1009G transistor can have a current gain of 200 to 400. The gain of the 2SC1009 will be in the range from 40 to 400, for the 2SC1009O it will be in the range from 70 to 140, for the 2SC1009R it will be in the range from 40 to 80, for the 2SC1009Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC1009G might only be marked "C1009G".

Complementary PNP transistor

The complementary PNP transistor to the 2SC1009G is the 2SA709G.

2SC1009G Transistor in TO-92 Package

The KSC1009G is the TO-92 version of the 2SC1009G.

Replacement and Equivalent for 2SC1009G transistor

You can replace the 2SC1009G with the KSC1009 or KSC1009G.
If you find an error please send an email to mail@el-component.com