KSC1009G Bipolar Transistor

Characteristics of KSC1009G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • Electrically Similar to the Popular 2SC1009G transistor

Pinout of KSC1009G

The KSC1009G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. The KSC1009CG transistor (with suffix "C") is the center collector version of the KSC1009G.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSC1009G transistor can have a current gain of 200 to 400. The gain of the KSC1009 will be in the range from 40 to 400, for the KSC1009O it will be in the range from 70 to 140, for the KSC1009R it will be in the range from 40 to 80, for the KSC1009Y it will be in the range from 120 to 240.

KSC1009G Transistor in TO-92 Package

The 2SC1009G is the TO-92 version of the KSC1009G.

Replacement and Equivalent for KSC1009G transistor

You can replace the KSC1009G with the 2SC1009 or 2SC1009G.
If you find an error please send an email to mail@el-component.com