KSC1009G Bipolar Transistor
Characteristics of KSC1009G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 8 V
- Collector Current − Continuous, max: 0.7 A
- Collector Dissipation: 0.8 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2SC1009G transistor
Pinout of KSC1009G
Here is an image showing the pin diagram of this transistor.
Classification of hFE
KSC1009G Transistor in TO-92 Package
Replacement and Equivalent for KSC1009G transistor
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