2SC1009R Bipolar Transistor

Characteristics of 2SC1009R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SC1009R

The 2SC1009R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC1009R transistor can have a current gain of 40 to 80. The gain of the 2SC1009 will be in the range from 40 to 400, for the 2SC1009G it will be in the range from 200 to 400, for the 2SC1009O it will be in the range from 70 to 140, for the 2SC1009Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC1009R might only be marked "C1009R".

Complementary PNP transistor

The complementary PNP transistor to the 2SC1009R is the 2SA709R.

2SC1009R Transistor in TO-92 Package

The KSC1009R is the TO-92 version of the 2SC1009R.

Replacement and Equivalent for 2SC1009R transistor

You can replace the 2SC1009R with the KSC1009 or KSC1009R.
If you find an error please send an email to mail@el-component.com