2SB929-Q Bipolar Transistor

Characteristics of 2SB929-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 70 to 150
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB929-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB929-Q transistor can have a current gain of 70 to 150. The gain of the 2SB929 will be in the range from 70 to 250, for the 2SB929-P it will be in the range from 120 to 250.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB929-Q might only be marked "B929-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB929-Q is the 2SD1252-Q.

Replacement and Equivalent for 2SB929-Q transistor

You can replace the 2SB929-Q with the 2SB906, 2SB929A, 2SB929A-Q, 2SB930, 2SB930-Q, 2SB930A, 2SB930A-Q or KTA1042D.
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