2SB929A-Q Bipolar Transistor

Characteristics of 2SB929A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 70 to 150
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB929A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB929A-Q transistor can have a current gain of 70 to 150. The gain of the 2SB929A will be in the range from 70 to 250.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB929A-Q might only be marked "B929A-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB929A-Q is the 2SD1252A-Q.

SMD Version of 2SB929A-Q transistor

The BDP952 (SOT-223) is the SMD version of the 2SB929A-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB929A-Q transistor

You can replace the 2SB929A-Q with the 2SB930A, 2SB930A-Q or KTA1042D.
If you find an error please send an email to mail@el-component.com