2SB930A-Q Bipolar Transistor

Characteristics of 2SB930A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 70 to 150
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB930A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB930A-Q transistor can have a current gain of 70 to 150. The gain of the 2SB930A will be in the range from 70 to 250, for the 2SB930A-P it will be in the range from 120 to 250.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB930A-Q might only be marked "B930A-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB930A-Q is the 2SD1253A-Q.

SMD Version of 2SB930A-Q transistor

The BDP952 (SOT-223) is the SMD version of the 2SB930A-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB930A-Q transistor

You can replace the 2SB930A-Q with the KTA1042D.
If you find an error please send an email to mail@el-component.com