2SB929A Bipolar Transistor
Characteristics of 2SB929A Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 70 to 250
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of 2SB929A
Classification of hFE
Marking
Complementary NPN transistor
SMD Version of 2SB929A transistor
Replacement and Equivalent for 2SB929A transistor
If you find an error please send an email to mail@el-component.com