2SB768-L Bipolar Transistor

Characteristics of 2SB768-L Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB768-L

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB768-L transistor can have a current gain of 60 to 120. The gain of the 2SB768 will be in the range from 40 to 200, for the 2SB768-K it will be in the range from 100 to 200, for the 2SB768-M it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB768-L might only be marked "B768-L".

Complementary NPN transistor

The complementary NPN transistor to the 2SB768-L is the 2SD1033-L.

Replacement and Equivalent for 2SB768-L transistor

You can replace the 2SB768-L with the 2SB928, 2SB928-Q, 2SB928A, 2SB928A-Q, 2SD1250, 2SD1250-Q, 2SD1250A or 2SD1250A-Q.
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