2SD1250A-Q Bipolar Transistor

Characteristics of 2SD1250A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 60 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1250A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1250A-Q transistor can have a current gain of 60 to 140. The gain of the 2SD1250A will be in the range from 60 to 240, for the 2SD1250A-P it will be in the range from 100 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1250A-Q might only be marked "D1250A-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SD1250A-Q is the 2SB928A-Q.

Replacement and Equivalent for 2SD1250A-Q transistor

You can replace the 2SD1250A-Q with the 2SB928A or 2SB928A-Q.
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