2SB768-M Bipolar Transistor

Characteristics of 2SB768-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB768-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB768-M transistor can have a current gain of 40 to 80. The gain of the 2SB768 will be in the range from 40 to 200, for the 2SB768-K it will be in the range from 100 to 200, for the 2SB768-L it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB768-M might only be marked "B768-M".

Complementary NPN transistor

The complementary NPN transistor to the 2SB768-M is the 2SD1033-M.
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