2SB716A-D Bipolar Transistor

Characteristics of 2SB716A-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 250 to 500
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB716A-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB716A-D transistor can have a current gain of 250 to 500. The gain of the 2SB716A will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB716A-D might only be marked "B716A-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB716A-D is the 2SD756A-D.

SMD Version of 2SB716A-D transistor

The FJV992 (SOT-23) is the SMD version of the 2SB716A-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB716A-D transistor

You can replace the 2SB716A-D with the 2SA1016K, 2SA1049, 2SA1082, 2SA1082-D, 2SA1085, 2SA1085-D, 2SA1269, 2SA1285, 2SA1285-F, 2SA1285A, 2SA1285A-F, 2SA1376, 2SA872A, 2SA872A-D, 2SA970, 2SA992, 2SB716, 2SB716-D or KSA992.
If you find an error please send an email to mail@el-component.com