2SB648A Bipolar Transistor

Characteristics of 2SB648A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB648A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB648A transistor can have a current gain of 60 to 200. The gain of the 2SB648A-B will be in the range from 60 to 120, for the 2SB648A-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB648A might only be marked "B648A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB648A is the 2SD668A.

Replacement and Equivalent for 2SB648A transistor

You can replace the 2SB648A with the 2SA1220A, 2SA1322, 2SA1352, 2SA1353, 2SA1380, 2SA1381, 2SA1406, 2SA1407, 2SA1478, 2SA1479, 2SA1480, 2SA1540, 2SA1541, 2SB1109, 2SB1110, 2SB649A, HSB1109, KSA1220A, KSA1381, KSE350, MJE350 or MJE350G.
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