2SB647B Bipolar Transistor

Characteristics of 2SB647B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB647B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB647B transistor can have a current gain of 60 to 120. The gain of the 2SB647 will be in the range from 60 to 320, for the 2SB647C it will be in the range from 100 to 200, for the 2SB647D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB647B might only be marked "B647B".

Complementary NPN transistor

The complementary NPN transistor to the 2SB647B is the 2SD667B.

Replacement and Equivalent for 2SB647B transistor

You can replace the 2SB647B with the 2SA1013, 2SA1013R, 2SA1275, 2SA1275-R, 2SB647A, 2SB647AB, KSA1013, KSA1013R, KTA1275 or KTA1275R.
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