2SB647C Bipolar Transistor

Characteristics of 2SB647C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB647C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB647C transistor can have a current gain of 100 to 200. The gain of the 2SB647 will be in the range from 60 to 320, for the 2SB647B it will be in the range from 60 to 120, for the 2SB647D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB647C might only be marked "B647C".

Complementary NPN transistor

The complementary NPN transistor to the 2SB647C is the 2SD667C.

Replacement and Equivalent for 2SB647C transistor

You can replace the 2SB647C with the 2SA1013, 2SA1013O, 2SA1275, 2SA1275-O, 2SA1315, 2SA965, 2SB647A, 2SB647AC, KSA1013, KSA1013O, KTA1275 or KTA1275O.
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