2SA965 Bipolar Transistor
Characteristics of 2SA965 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 0.9 W
- DC Current Gain (hfe): 80 to 240
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92MOD
Pinout of 2SA965
Classification of hFE
Marking
Complementary NPN transistor
SMD Version of 2SA965 transistor
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