2SD667B Bipolar Transistor

Characteristics of 2SD667B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD667B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD667B transistor can have a current gain of 60 to 120. The gain of the 2SD667 will be in the range from 60 to 320, for the 2SD667C it will be in the range from 100 to 200, for the 2SD667D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD667B might only be marked "D667B".

Complementary PNP transistor

The complementary PNP transistor to the 2SD667B is the 2SB647B.

Replacement and Equivalent for 2SD667B transistor

You can replace the 2SD667B with the 2SC2383, 2SC2383R, 2SC3228, 2SC3228-R, 2SD667A, 2SD667AB, KSC2383, KSC2383R, KTC3228 or KTC3228R.
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