Characteristics of 2SB1229-S Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 140 to 280
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SB1229-S
The 2SB1229-S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SB1229-S transistor can have a current gain of
140 to
280. The gain of the
2SB1229 will be in the range from
100 to
560, for the
2SB1229-R it will be in the range from
100 to
200, for the
2SB1229-T it will be in the range from
200 to
400, for the
2SB1229-U it will be in the range from
280 to
560.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SB1229-S might only be marked "
B1229-S".
Complementary NPN transistor
The complementary
NPN transistor to the 2SB1229-S is the
2SD1835-S.
SMD Version of 2SB1229-S transistor
The
2SA1364 (SOT-89),
2SB1115 (SOT-89),
2SB1115-YM (SOT-89),
2SB1122 (SOT-89),
2SB1122-S (SOT-89),
2SB1123 (SOT-89),
2SB1123-S (SOT-89),
2SB766A (SOT-89),
BSP31 (SOT-223) and
BSR31 (SOT-89) is the SMD version of the 2SB1229-S transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
Replacement and Equivalent for 2SB1229-S transistor
You can replace the 2SB1229-S with the
2SA1680,
2SA1761,
2SB892,
2SB892-S,
2SB985 or
2SB985S.
If you find an error please send an email to mail@el-component.com