2SB1115-YM Bipolar Transistor

Characteristics of 2SB1115-YM Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 2 W
  • DC Current Gain (hfe): 135 to 270
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB1115-YM

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1115-YM transistor can have a current gain of 135 to 270. The gain of the 2SB1115 will be in the range from 135 to 600, for the 2SB1115-YK it will be in the range from 300 to 600, for the 2SB1115-YL it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1115-YM might only be marked "B1115-YM".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1115-YM is the 2SD1615-GM.

Replacement and Equivalent for 2SB1115-YM transistor

You can replace the 2SB1115-YM with the 2SA1364, 2SB1115A, 2SB1115A-YQ, 2SB1122, 2SB1123, 2SB1124, 2SB766A, 2STF2550, BSR31 or BSR33.
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