2SB766A Bipolar Transistor
Characteristics of 2SB766A Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 85 to 340
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-89
Pinout of 2SB766A
Classification of hFE
Marking
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com