2SB766A Bipolar Transistor

Characteristics of 2SB766A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 85 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB766A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB766A transistor can have a current gain of 85 to 340. The gain of the 2SB766A-Q will be in the range from 85 to 170, for the 2SB766A-R it will be in the range from 120 to 240, for the 2SB766A-S it will be in the range from 170 to 340.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB766A might only be marked "B766A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB766A is the 2SD874A.
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