BDP956 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -120 V
• Collector-Base Voltage, max: -140 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -3 A
• Collector Dissipation: 3 W
• DC Current Gain (h_fe): 40 to 475
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-223

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the BDP956 is the BDP955.