2SB1155-Q Bipolar Transistor

Characteristics of 2SB1155-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1155-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1155-Q transistor can have a current gain of 90 to 180. The gain of the 2SB1155 will be in the range from 90 to 260, for the 2SB1155-P it will be in the range from 130 to 260.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1155-Q might only be marked "B1155-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1155-Q is the 2SD1706-Q.

Replacement and Equivalent for 2SB1155-Q transistor

You can replace the 2SB1155-Q with the 2SB1156 or 2SB1156-Q.
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