2SB1155 Bipolar Transistor

Characteristics of 2SB1155 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 90 to 260
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1155

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1155 transistor can have a current gain of 90 to 260. The gain of the 2SB1155-P will be in the range from 130 to 260, for the 2SB1155-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1155 might only be marked "B1155".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1155 is the 2SD1706.

Replacement and Equivalent for 2SB1155 transistor

You can replace the 2SB1155 with the 2SB1156.
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